Sub-30ps ECL circuits using high-fT Si and SiGe epitaxial base SEEW transistors
- J.N. Burghartz
- J.H. Comfort
- et al.
- 1990
- IEDM 1990
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64 results for J.M.C. Stork
EPI active devices
- G.L. Patton
- B.S. Meyerson
- et al.
- 1990
- Silicon Materials Science and Technology 1990
Narrow band gap base heterojunction bipolar transistors using SiGe alloys
- Subramanian S. Iyer
- G.L. Patton
- et al.
- 1990
- Thin Solid Films
Self-Aligned SiGe-Base Heterojunction Bipolar Transistor by Selective Epitaxy Emitter Window (SEEW) Technology
- Joachim N. Burghartz
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
75-GHz fT SiGe-Base Heterojunction Bipolar Transistors
- Gary L. Patton
- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
SiGe heterojunction bipolar transistors
- J.M.C. Stork
- G.L. Patton
- et al.
- 1989
- VLSI Technology 1989
Self-aligned bipolar npn transistor with 60 nm epitaxial base
- J.N. Burghartz
- S. Mader
- et al.
- 1989
- IEDM 1989
SiGe-base, poly-emitter heterojunction bipolar transistors
- G.L. Patton
- D.L. Harame
- et al.
- 1989
- VLSI Technology 1989
Design issues for SiGe heterojunction bipolar transistors
- J.M.C. Stork
- G.L. Patton
- et al.
- 1989
- Bipolar Circuits and Technology Meeting 1989
Base Profile Design for High-Performance Operation of Bipolar Transistors at Liquid-Nitrogen Temperature
- Johannes M. C. Stork
- David L. Harame
- et al.
- 1989
- IEEE T-ED