HIGHLY LATCHUP-IMMUNE 1- mu m CMOS TECHNOLOGY FABRICATED WITH 1 Mev ION IMPLANTATION AND SELF-ALIGNED TiSi//2.
- F.S. Lai
- L.K. Wang
- et al.
- 1984
- IEDM 1984
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10 results for Fang-Shi J. Lai
Response to "Comments on the paper 'Coupling capacitances in VLSI Circuits calculated by multi-dimensional discrete fourier-series'"
- F.S. Lai
- 1991
- Solid State Electronics
Coupling capacitances in VLSI circuits calculated by multi-dimensional discrete Fourier series
- F.S. Lai
- 1989
- Solid State Electronics
A generalized algorithm for CMOS circuit delay, power, and area optimization
- F.S. Lai
- 1988
- Solid State Electronics
Cross-sectional transmission electron microscopy investigation of Ti/Si reaction on phosphorus-doped polycrystalline silicon gate
- C.Y. Wong
- F.S. Lai
- et al.
- 1986
- Journal of Applied Physics
Ambient and dopant effects on boron diffusion in oxides
- C.Y. Wong
- F.S. Lai
- 1986
- Applied Physics Letters
Design and Characteristics of a Lightly Doped Drain (LDD) Device Fabricated with Self-Aligned Titanium Disilicide
- Fang-Shi J. Lai
- Jack Yuan-Chen Sun
- et al.
- 1986
- IEEE T-ED
A Highly Latchup-Immune 1-μm CMOS Technology Fabricated with 1-MeV Ion Implantation and Self-Aligned TiSi2
- Fang-Shi J. Lai
- L.K. Wang
- et al.
- 1986
- IEEE T-ED
An Analytical One-Dimensional Model for Lightly Doped Drain (LDD) MOSFET Devices
- Fang-Shi J. Lai
- Jack Yuan-Chen Sun
- 1985
- IEEE T-ED
An analytic model to estimate the avalanche breakdown voltage improvement for LDD devices
- F.S. Lai
- 1985
- Solid-State Electronics