Sub-300-ps CBL Circuits
- S.K. Wiedmann
- Tze Chiang Chen
- et al.
- 1989
- IEEE Electron Device Letters
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33 results for G.P. Li
Degradation of bipolar transistors under high current stress at 300 K
- R.A. Wachnik
- T. Bucelot
- et al.
- 1988
- Journal of Applied Physics
Sub-50 ps single poly planar bipolar technology
- T.C. Chen
- D.D. Tang
- et al.
- 1988
- IEDM 1988
Effects of processing conditions on the characteristics of platinum silicide Schottky barrier diodes
- D. Moy
- S. Basavaiah
- et al.
- 1988
- Solid State Electronics
An Advanced Bipolar Transistor with Self-Aligned Ion-Implanted Base and W/Poly Emitter
- Tze-Chiang Chen
- Suryadever Basvaiah
- et al.
- 1988
- IEEE T-ED
Waveform Measurements in High-Speed Silicon Bipolar Circuits Using a Picosecond Photoelectron Scanning Electron Microscope
- Paul May
- Jean-Marc Halbout
- et al.
- 1988
- IEEE T-ED
On the Narrow-Emitter Effect of Advanced Shallow-Profile Bipolar Transistors
- G.P. Li
- C.T. Chuang
- et al.
- 1988
- IEEE T-ED
Bipolar Transistor with Self-Aligned Lateral Profile
- G.P. Li
- Tze-Chiang Chen
- et al.
- 1987
- IEEE Electron Device Letters
Lateral Encroachment of Extrinsic-Base Dopant in Submicrometer Bipolar Transistors
- Pong-Fei Lu
- G.P. Li
- et al.
- 1987
- IEEE Electron Device Letters
Methodology for Bipolar Process Diagnosis and Its Application to Advanced Self-Aligned Bipolar Transistors
- G.P. Li
- E. Hackbarth
- et al.
- 1987
- IEEE T-ED