Publications

6 results for K. Hofmann

Acceleration Factors for the Decomposition of Thermally Grown SiO₂ Films
- - S.I. Raider
- 2019
- JES
Defect microchemistry at the SiO2/Si interface
- - G.W. Rubloff
  - K. Hofmann
  - et al.
- 1987
- Physical Review Letters
Hole trapping in SiO₂ films annealed in low-pressure oxygen atmosphere
- - K. Hofmann
  - D.R. Young
  - et al.
- 1987
- Journal of Applied Physics
Role of oxygen in defect-related breakdown in thin SiO₂ films on Si (100)
- - K. Hofmann
  - G.W. Rubloff
  - et al.
- 1987
- Journal of Applied Physics
High temperature reaction and defect chemistry at the Si/SiO₂ interface
- - K. Hofmann
  - G.W. Rubloff
  - et al.
- 1987
- Applied Surface Science
Defect formation in thermal SiO₂ by high-temperature annealing
- - K. Hofmann
  - G.W. Rubloff
  - et al.
- 1986
- Applied Physics Letters