Scaled GaAs MESFET's with gate length down to 100 nm
- Heinz Jaeckel
- Volker Graf
- et al.
- 1986
- IEEE Electron Device Letters
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6 results for Volker Graf
Optical study of extended-molecular-layer flat islands in lattice-matched In0.53Ga0.47As/InP and In0.53Ga0.47As/In1-xGaxAsyP1-y quantum wells grown by low-pressure metal-organic vapor-phase epitaxy with different interruption cycles
- R. Sauer
- S. Nilsson
- et al.
- 1992
- Physical Review B
GaInAs/InP selective area metalorganic vapor phase epitaxy for one-step-grown buried low-dimensional structures
- Y.D. Galeuchet
- P. Roentgen
- et al.
- 1990
- Journal of Applied Physics
Buried GaInAs/InP layers grown on nonplanar substrates by one-step low-pressure metalorganic vapor phase epitaxy
- Yvan D. Galeuchet
- Peter Roentgen
- et al.
- 1988
- Applied Physics Letters
Shallow implants into GaAs
- Volker Graf
- Willi Heuberger
- 1987
- Nuclear Inst. and Methods in Physics Research, B
High-temperature-stable Si3N4 dummy T-gate and lift-off mask
- P. Buchmann
- V. Graf
- et al.
- 1986
- Microelectronic Engineering