Substrate temperature dependence of arsenic precipitate formation in AlGaAs and GaAs
- K. Mahalingam
- N. Otsuka
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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31 results for Alan C. Warren
Surface Fermi level engineering: Or there's more to Schottky barriers than just making diodes and field effect transistor gates
- J. Freeouf
- Alan C. Warren
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
GaAs buffer layers grown at low substrate temperatures using As2 and the formation of arsenic precipitates
- M.R. Melloch
- K. Mahalingam
- et al.
- 1991
- Journal of Crystal Growth
IVA-5 GaAs Sees THE Light
- M.R. Melloch
- Alan C. Warren
- et al.
- 1991
- IEEE T-ED
GaAs sees the light
- J. Woodall
- Alan C. Warren
- et al.
- 1991
- IEEE T-ED
Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy
- Alan C. Warren
- J. Woodall
- et al.
- 1990
- Applied Physics Letters
Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
- M.R. Melloch
- N. Otsuka
- et al.
- 1990
- Applied Physics Letters
The electronic properties and control of semiconductor interfaces
- J. Woodall
- P.D. Kirchner
- et al.
- 1990
- Corrosion Science
Masked, anisotropic thermal etching and regrowth for in situ patterning of compound semiconductors
- Alan C. Warren
- J. Woodall
- et al.
- 1987
- Applied Physics Letters
Magnetoconductance oscillations of a quasi-one-dimensional electron gas in a parabolic transverse potential
- S.B. Kaplan
- Alan C. Warren
- 1986
- Physical Review B