Mechanism of silicon surface roughening by reactive ion etching
- Gottlieb S. Oehrlein
- Robert G. Schad
- et al.
- 2004
- Surface and Interface Analysis
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18 results for Mark A. Jaso
Octagonal Washer De Squids and Integrated Susceptometers Fabricated in a Planarized Sub-^Im Nb - A10X - Nb Technology
- M.B. Ketchen
- D.J. Pearson
- et al.
- 1993
- IEEE TAS
Sub-μm linewidth input coils for low Tc integrated thin-film dc superconducting quantum interference devices
- M.B. Ketchen
- K. Stawiasz
- et al.
- 1992
- Applied Physics Letters
Sub-μm, planarized, Nb-AlOx-Nb Josephson process for 125 mm wafers developed in partnership with Si technology
- M.B. Ketchen
- D.J. Pearson
- et al.
- 1991
- Applied Physics Letters
A photoemission investigation of surface processes affecting the reactive ion etching of TiSi2 in CF4
- S.W. Robey
- M.A. Jaso
- et al.
- 1989
- Journal of Applied Physics
Surface analysis of realistic semiconductor microstructures
- Gottlieb S. Oehrlein
- Kevin K. Chan
- et al.
- 1989
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
In situ spatially resolved surface characterization of realistic semiconductor structure after reactive ion etching process
- Gottlieb S. Oehrlein
- Kevin K. Chan
- et al.
- 1988
- Journal of Applied Physics
Transient fluorocarbon film thickness effects near the silicon dioxide/silicon interface in selective silicon dioxide reactive ion etching
- Mark A. Jaso
- Gottlieb S. Oehrlein
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films