Sub-μm, planarized, Nb-AlOx-Nb Josephson process for 125 mm wafers developed in partnership with Si technology
- M.B. Ketchen
- D.J. Pearson
- et al.
- 1991
- Applied Physics Letters
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18 results for Mark A. Jaso
A novel application of polyimide-W-AI/CU for VLSI interconnect
- R.V. Joshi
- L. Hsu
- et al.
- 1991
- VMIC 1991
A 0.5 μm fully scaled two-level metal fully planarized interconnect structure fabricated with X-ray lithography
- D. Moy
- L.K. Wang
- et al.
- 1990
- VLSI Technology 1990
A photoemission investigation of surface processes affecting the reactive ion etching of TiSi2 in CF4
- S.W. Robey
- M.A. Jaso
- et al.
- 1989
- Journal of Applied Physics
Low-resistance submicron CVD W interlevel via plugs on Al-Cu-Si
- R.V. Joshi
- S.B. Brodsky
- et al.
- 1989
- VMIC 1989
Surface analysis of realistic semiconductor microstructures
- Gottlieb S. Oehrlein
- Kevin K. Chan
- et al.
- 1989
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
In situ spatially resolved surface characterization of realistic semiconductor structure after reactive ion etching process
- Gottlieb S. Oehrlein
- Kevin K. Chan
- et al.
- 1988
- Journal of Applied Physics
Transient fluorocarbon film thickness effects near the silicon dioxide/silicon interface in selective silicon dioxide reactive ion etching
- Mark A. Jaso
- Gottlieb S. Oehrlein
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films