Shaping site-controlled uniform arrays of SiGe/Si(001) islands by in situ annealing
- J.J. Zhang
- A. Rastelli
- et al.
- 2009
- Applied Physics Letters
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6 results for F. Schäffler
Electron spin coherence in Si
- A.M. Tyryshkin
- S.A. Lyon
- et al.
- 2006
- Physica E: Low-Dimensional Systems and Nanostructures
Summary Abstract: The role of interface states on Schottky behavior
- G. Jezequel
- A. Taleb-lbrahimi
- et al.
- 1988
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Sb/GaAs(110) interface: A reevaluation
- F. Schäffler
- R. Ludeke
- et al.
- 1987
- Physical Review B
Summary abstract: Metal-induced impurity states at the inP/transition-metal interface
- F. Schaffler
- W. Drube
- et al.
- 1987
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Comparative study of Y and other transition metals on GaAs(110)
- F. Schäffler
- G. Hughes
- et al.
- 1987
- Physical Review B