Silicon-Germanium-Base Heterojunction Bipolar Transistors By Molecular Beam Epitaxy
- Gary L. Patton
- Subramanian S. Iyer
- et al.
- 1988
- IEEE Electron Device Letters
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10 results for S.L. Delage
Interfacial reaction between Ni and MBE-Grown SiGe alloy
- R.D. Thompson
- K.N. Tu
- et al.
- 2019
- JES
Some Titanium Germanium and Silicon Compounds: Reaction and Properties
- O. Thomas
- F.M. d' Heurle
- et al.
- 2011
- Journal of Materials Research
Grain-boundary states and hydrogenation of fine-grained polycrystalline silicon films deposited by molecular beams
- D. Joussej
- S.L. Delage
- et al.
- 2006
- Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Reaction of titanium with germanium and silicon-germanium alloys
- O. Thomas
- S.L. Delage
- et al.
- 1989
- Applied Physics Letters
Nucleation and growth in the reaction of titanium with germanium and some silicon-germanium alloys
- O. Thomas
- F.M. D'Heurle
- et al.
- 1989
- Applied Surface Science
High conductivity polycrystalline silicon obtained by molecular beam deposition
- S.L. Delage
- S.-J. Jeng
- et al.
- 1988
- Applied Physics Letters
Technique for selective etching of Si with respect to Ge
- A.A. Bright
- Subramanian S. Iyer
- et al.
- 1988
- Applied Physics Letters
Origin and reduction of interfacial boron spikes in silicon molecular beam epitaxy
- Subramanian S. Iyer
- S.L. Delage
- et al.
- 1988
- Applied Physics Letters
Detection and characterization of individual Ge layers in Si(100) using Raman spectroscopy
- J.C. Tsang
- Subramanian S. Iyer
- et al.
- 1987
- Applied Physics Letters