High-Gain Pseudomorphic InGaAs Base Ballistic Hot-Electron Device
- K. Seo
- Mordehai Heiblum
- et al.
- 1989
- IEEE Electron Device Letters
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3 results for P. Bhattacharya
Characteristics and device applications of erbium doped III-V semiconductors grown by molecular beam epitaxy
- S. Sethi
- P. Bhattacharya
- 1996
- Journal of Electronic Materials
Pseudomorphic InGaAs base ballistic hot-electron device
- K. Seo
- M. Heiblum
- et al.
- 1988
- Applied Physics Letters