Reliable 1.2W CW red-emitting (Al)GaInP diode laser array with AlGaAs cladding layers
- H. Jaeckel
- G.L. Bona
- et al.
- 1993
- Electronics Letters
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25 results for P. Roentgen
Regrowth of InP by MOVPE on dry-etched heterostructures of InP-GaInAsP
- A. Catana
- R.F. Broom
- et al.
- 1993
- Journal of Crystal Growth
(A1)GaInP Laser with Lateral Confinement by Epitaxial Growth on Nonplanar Substrates
- Gian-Luca Bona
- Peter Unger
- et al.
- 1993
- IEEE Photonics Technology Letters
Low-Threshold Strained GaInP Quantum-Well Ridge Lasers with AlGaAs Cladding Layers
- Peter Unger
- Gian-Luca Bona
- et al.
- 1993
- IEEE Journal of Quantum Electronics
Local mirror temperatures of red-emitting (Al)GaInP quantum-well laser diodes by Raman scattering and reflectance modulation measurements
- P.W. Epperlein
- G.L. Bona
- et al.
- 1992
- Applied Physics Letters
Optical study of extended-molecular-layer flat islands in lattice-matched In0.53Ga0.47As/InP and In0.53Ga0.47As/In1-xGaxAsyP1-y quantum wells grown by low-pressure metal-organic vapor-phase epitaxy with different interruption cycles
- R. Sauer
- S. Nilsson
- et al.
- 1992
- Physical Review B
Junction-side up operation of (Al)GaInP lasers with very low threshold currents
- P. Unger
- P. Roentgen
- et al.
- 1992
- Electronics Letters
Compositional variation and ordering of GaxIn1-xP on GaAs structured substrates
- N.I. Buchan
- A. Jakubowicz
- et al.
- 1992
- Applied Physics Letters
In situ buried GaInAs/InP quantum dot arrays by selective area metalorganic vapor phase epitaxy
- Yvan D. Galeuchet
- Hugo Rothuizen
- et al.
- 1991
- Applied Physics Letters
MOVPE on patterned substrates: a new fabrication method for nanometer structure devices
- Yvan D. Galeuchet
- Hugo Rothuizen
- et al.
- 1991
- Microelectronic Engineering