Doping of n+ and p+ polysilicon in a dual-gate CMOS process
- C.Y. Wong
- J.Y.-C. Sun
- et al.
- 1988
- IEDM 1988
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4 results for R. Angelucci
Rapid thermal processing of arsenic-implanted polysilicon on very thin oxide
- J.Y.-C. Sun
- R. Angelucci
- et al.
- 1988
- ESSDERC 1988
Equilibrium Carrier Density and Solubility of Antimony in Silicon
- D. Nobili
- R. Angelucci
- et al.
- 2019
- JES
Thick oxidised porous silicon layer as a thermo-insulating membrane for high-temperature operating thin- and thick-film gas sensors
- P. Maccagnani
- R. Angelucci
- et al.
- 1998
- Sensors and Actuators, B: Chemical