MOVPE on patterned substrates: A new fabrication method for nanometer structure devices
- Yvan D. Galeuchet
- Hugo Rothuizen
- et al.
- 1991
- ESSDERC 1991
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7 results for Yvan D. Galeuchet
In situ buried GaInAs/InP quantum dot arrays by selective area metalorganic vapor phase epitaxy
- Yvan D. Galeuchet
- Hugo Rothuizen
- et al.
- 1991
- Applied Physics Letters
MOVPE on patterned substrates: a new fabrication method for nanometer structure devices
- Yvan D. Galeuchet
- Hugo Rothuizen
- et al.
- 1991
- Microelectronic Engineering
Selective area MOVPE of GaInAs/InP heterostructures on masked and nonplanar (100) and {111} substrates
- Y.D. Galeuchet
- P. Roentgen
- 1991
- Journal of Crystal Growth
GaInAs/InP selective area metalorganic vapor phase epitaxy for one-step-grown buried low-dimensional structures
- Y.D. Galeuchet
- P. Roentgen
- et al.
- 1990
- Journal of Applied Physics
Indium adatom migration during molecular beam epitaxial growth of strained InGaAs/GaAs single quantum wells
- D.J. Arent
- S. Nilsson
- et al.
- 1989
- Applied Physics Letters
Buried GaInAs/InP layers grown on nonplanar substrates by one-step low-pressure metalorganic vapor phase epitaxy
- Yvan D. Galeuchet
- Peter Roentgen
- et al.
- 1988
- Applied Physics Letters