High-Transconductance P-Channel Algaas/Gaas Hfet's with Low-Energy Beryllium and Fluorine Co-Implantation Self-Alignment
- Richard A. Kiehl
- P.E. Hallali
- et al.
- 1991
- IEEE Electron Device Letters
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6 results for P.E. Hallali
Thermally stable in-based ohmic contacts to p-type GaAs
- P.E. Hallali
- M. Murakami
- et al.
- 1991
- Gallium Arsenide and Related Compounds 1991
Thermally stable ohmic contacts to p-type GaAs. IX. NiInW and NiIn(Mn)W contact metals
- P.E. Hallali
- Masanori Murakami
- et al.
- 1991
- Journal of Applied Physics
Outdiffusion of Be during rapid thermal annealing of high-dose Be-implanted GaAs
- H. Baratte
- D.K. Sadana
- et al.
- 1990
- Journal of Applied Physics
Effect of F co-implant during annealing of Be-implanted GaAs
- P.E. Hallali
- H. Baratte
- et al.
- 1990
- Applied Physics Letters
Thermally stable ohmic contacts to n-type GaAs. VII. Addition of Ge or Si to NiInW ohmic contacts
- Masanori Murakami
- W.H. Price
- et al.
- 1990
- Journal of Applied Physics