Orientation-dependent chemistry and Schottky-barrier formation at metal-GaAs interfaces
- S. Chang
- L.J. Brillson
- et al.
- 1990
- Physical Review Letters
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7 results for D.F. Rioux
Effect of semiconductor growth method and bulk doping on fermi level stabilization for aluminum and gold contacts on n- and p-GaAs(100)
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1993
- Journal of Electronic Materials
Chemical and electronic properties of Al/[vicinal GaAs(100)] and Au/[vicinal GaAs(100)] interfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1992
- Physical Review B
Correlation of deep-level and chemically-active-site densities at vicinal GaAs(100)-Al interfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1991
- Physical Review B
Increased range of Fermi-level stabilization energy at metal/melt-grown GaAs(100) interfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Correlation of interface chemistry, barrier height, and step density for Al on vicinal GaAs(100) surfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1991
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Confirmation of the temperature-dependent photovoltaic effect on Fermi-level measurements by photoemission spectroscopy
- S. Chang
- I.M. Vitomirov
- et al.
- 1990
- Physical Review B