Photocreation and photobleaching of a-Si N1.6:H/c-Si interface states studied by photocapacitance transient spectroscopy
- C. Godet
- Jerzy Kanicki
- 1993
- Physica B: Physics of Condensed Matter
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Some electrical properties of amorphous silicon/amorphous silicon nitride interfaces: Top nitride and bottom nitride configurations in MNS and TFT devices
- C. Godet
- Jerzy Kanicki
- et al.
- 1992
- Journal of Applied Physics
Transient photocapacitance and capacitance studies of interface and bulk states in metal / a-SiN1.6:H / a-Si:H / c-Si devices
- Christian Godet
- Jerzy Kanicki
- et al.
- 1991
- Journal of Non-Crystalline Solids