InP/InGaAs Heterojunction Bipolar Transistors Grown by Gas-Source Molecular Beam Epitaxy with Carbon-Doped Base
- Russell C. Gee
- Tsung-Pei Chin
- et al.
- 1992
- IEEE Electron Device Letters
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4 results for C.W. Tu
Gas-source molecular beam epitaxial growth, characterization, and light-emitting diode application of InxGa1-xP on GaP(100)
- T.P. Chin
- J.C.P. Chang
- et al.
- 1993
- Applied Physics Letters
Nature of band bending at semiconductor surfaces by contactless electroreflectance
- X. Yin
- Xinxin Guo
- et al.
- 1992
- Applied Physics Letters
Highly carbon-doped p-type Ga0.5In0.5As and Ga 0.5In0.5P by carbon tetrachloride in gas-source molecular beam epitaxy
- T.P. Chin
- P.D. Kirchner
- et al.
- 1991
- Applied Physics Letters