Interaction of HfO2/SiO2/Si structures with deuterium gas
- C. Driemeier
- L. Miotti
- et al.
- 2006
- Applied Physics Letters
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76 results for E. Gusev
Germanium channel MOSFETs: Opportunities and challenges
- Huiling Shang
- Martin M. Frank
- et al.
- 2006
- IBM J. Res. Dev
Bias-temperature instabilities and radiation effects in MOS devices
- X.J. Zhou
- D.M. Fleetwood
- et al.
- 2005
- IEEE TNS
On the location and magnitude of trapped charge in poly- Si ALD-Al 2O3 capped Hf-silicate gate stacks
- Kingsuk Maitra
- Barry P. Linder
- et al.
- 2005
- PRiME/ECS Meeting 2005
Optimization of high κ gate stacks with poly-Si, FUSI and metal electrodes
- R. Jammy
- V. Narayanan
- et al.
- 2005
- ISTC 2005
Electron mobility dependence of W/HFO 2 gate stacks on interfacial layer preparation
- A.C. Callegari
- P. Jamison
- et al.
- 2005
- ECS Meeting 2005
Systematic study of workfunction engineering and scavenging effect using NiSi alloy FUSI metal gates with advanced gate stacks
- Y.-H. Kim
- C. Cabral Jr.
- et al.
- 2005
- IEDM 2005
HfO 2/metal stacks: Determination of energy level diagram, work functions & their dependence on metal deposition
- S. Zafar
- V. Narayanan
- et al.
- 2005
- VLSI Technology 2005
A comparative study of NBTI as a function of Si substrate orientation and gate dielectrics (SiON and SiON/HfO 2)
- S. Zafar
- M. Yang
- et al.
- 2005
- VLSI Technology 2005
Poly-Si/high-k gate stacks with near-ideal threshold voltage and mobility
- M.M. Frank
- V.K. Paruchuri
- et al.
- 2005
- VLSI-TSA 2005