Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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76 results for E. Gusev

80 nm poly-silicon gated n-FETs with ultra-thin Al₂O₃ gate dielectric for ULSI applications
- - D.A. Buchanan
  - E. Gusev
  - et al.
- 2000
- IEDM 2000
Process optimization for high electron mobility in nMOSFETs with aggressively scaled HfO₂/metal stacks
- - V. Narayanan
  - K. Maitra
  - et al.
- 2006
- IEEE Electron Device Letters
Asymmetric Energy Distribution of Interface Traps in n- and p-MOSFETs with HfO₂ Gate Dielectric on Ultrathin SiON Buffer Layer
- - J.-P. Han
  - E.M. Vogel
  - et al.
- 2004
- IEEE Electron Device Letters
Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO₂ gate dielectrics
- - Min Yang
  - Evgeni P. Gusev
  - et al.
- 2003
- IEEE Electron Device Letters
Tunable Workfunction for Fully Silicied Gates (FUSI) and Proposed Mechanisms
- - Y.-H. Kim
  - C. Cabral Jr.
  - et al.
- 2006
- VLSI-TSA 2006
HfO ₂/metal stacks: Determination of energy level diagram, work functions & their dependence on metal deposition
- - S. Zafar
  - V. Narayanan
  - et al.
- 2005
- VLSI Technology 2005
Optimization of high κ gate stacks with poly-Si, FUSI and metal electrodes
- - R. Jammy
  - V. Narayanan
  - et al.
- 2005
- ISTC 2005
On the location and magnitude of trapped charge in poly- Si ALD-Al ₂O₃ capped Hf-silicate gate stacks
- - Kingsuk Maitra
  - Barry P. Linder
  - et al.
- 2005
- PRiME/ECS Meeting 2005
Electron mobility dependence of W/HFO ₂ gate stacks on interfacial layer preparation
- - A.C. Callegari
  - P. Jamison
  - et al.
- 2005
- ECS Meeting 2005
Poly-Si/high-k gate stacks with near-ideal threshold voltage and mobility
- - M.M. Frank
  - V.K. Paruchuri
  - et al.
- 2005
- VLSI-TSA 2005