Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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76 results for E. Gusev

A comparative study of NBTI as a function of Si substrate orientation and gate dielectrics (SiON and SiON/HfO ₂)
- - S. Zafar
  - M. Yang
  - et al.
- 2005
- VLSI Technology 2005
Charge trapping and detrapping in HfO₂ high-κ MOS capacitors using internal photoemission
- - D. Felnhofer
  - E. Gusev
  - et al.
- 2005
- INFOS 2005
Reverse short channel effects in high-k gated nMOSFETs
- - J.-P. Han
  - S.M. Koo
  - et al.
- 2005
- Microelectronics Reliability
Systematic study of pFET V_t with Hf-based gate stacks with poly-Si and FUSI gates
- - E. Cartier
  - V. Narayanan
  - et al.
- 2004
- VLSI Technology 2004
Surface potential and morphology issues of annealed (HfO ₂) _x(SiO ₂) _1-x gate oxides
- - R. Ludeke
  - P. Lysaght
  - et al.
- 2004
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Valence and conduction band offsets of a ZrO₂/SiO _xN_y/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study
- - S. Sayan
  - R.A. Bartynski
  - et al.
- 2004
- physica status solidi (b)
Interface trapping properties of nMOSFETs with Al₂O ₃/SiO_xN_y/Si(1 0 0) gate dielectric stacks after exposure to ionizing radiation
- - J.A. Felix
  - H.D. Xiong
  - et al.
- 2003
- INFOS 2003
Charge trapping and detrapping in HfO₂ high-κ gate stacks
- - E. Gusev
  - C. D'Emic
  - et al.
- 2003
- INFOS 2003
Radiation-Induced Charge Trapping in Thin Al₂O ₃/SiO_xN_y/Si(100) Gate Dielectric Stacks
- - J.A. Felix
  - M.R. Shaneyfelt
  - et al.
- 2003
- IEEE TNS
Recent progress in devices and materials for CMOS technology
- - H.-S. Philip Wong
  - B. Doris
  - et al.
- 2003
- VLSI-TSA 2003