Performance elements for 28nm gate length bulk devices with gate first high-k metal gate
- Jun Yuan
- C. Gruensfelder
- et al.
- 2010
- ICSICT 2010
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0.18 um modular triple self-aligned embedded split-gate flash memory
- Rebecca Mih
- Jay Harrington
- et al.
- 2000
- Digest of Technical Papers-Symposium on VLSI Technology