Vertical surround-gated silicon nanowire impact ionization field-effect transistors
- M.T. Björk
- O. Hayden
- et al.
- 2007
- Applied Physics Letters
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62 results for W. Riess
Fully depleted nanowire field-effect transistor in inversion mode
- Oliver Hayden
- Mikael T. Björk
- et al.
- 2007
- Small
Nanowire-based one-dimensional electronics
- C. Thelander
- P. Agarwal
- et al.
- 2006
- Materials Today
Tuning optoelectronic properties of ambipolar organic light-emitting transistors using a bulk-heterojunction approach
- Maria Antonietta Loi
- Constance Rost-Bietsch
- et al.
- 2005
- Advanced Functional Materials
Realization of a silicon nanowire vertical surround-gate field-effect transistor
- Volker Schmidt
- Heike Riel
- et al.
- 2005
- Small
Operation and properties of ambipolar organic field-effect transistors
- G. Paasch
- Th. Lindner
- et al.
- 2005
- Journal of Applied Physics
Ambipolar light-emitting organic field-effect transistor
- Constance Rost
- Siegfried Karg
- et al.
- 2004
- Applied Physics Letters
Ambipolar organic field-effect transistor based on an organic heterostructure
- Constance Rost
- David J. Gundlach
- et al.
- 2004
- Journal of Applied Physics
Optimizing OLED structures for a-Si display applications via combinatorial methods and enhanced outcoupling
- W. Rieß
- T.A. Beierlein
- et al.
- 2004
- Physica Status Solidi (A) Applied Research
Tuning the emission characteristics of top-emitting organic light-emitting devices by means of a dielectric capping layer: An experimental and theoretical study