Analysis of plasma-induced modification of ULK and eULK Materials: Dual damascene processing challenges for 45nm (κ ≤ 2.4) and beyond BEOL technologies
- N. Fuller
- M.A. Worsley
- et al.
- 2006
- IITC 2006
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4 results for T.L. Tai
Plasma induced dielectric modification: Etching challenges for 65nm and beyond technology nodes
- N. Fuller
- M.A. Worsley
- et al.
- 2005
- ISTC 2005
Effect of radical species density and ion bombardment during ashing of extreme ultralow- κ interlevel dielectric materials
- M.A. Worsley
- S. Bent
- et al.
- 2007
- Journal of Applied Physics
High temperature reactive ion etching of indium-tin oxide with HBr and CH4 mixtures
- Yue Kuo
- T.L. Tai
- 1998
- JES