0.25μm low power CMOS devices and circuits from 8 inch SOI materials
- B. Chen
- A.S. Yapsir
- et al.
- 1995
- ICSICT 1995
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14 results for R. Schulz
A high performance BiCMOS technology using 0.25 μm CMOS and double poly 47 GHz bipolar
- G. Shahidi
- J. Warnock
- et al.
- 1992
- VLSI Technology 1992
A new planarization technique, using a combination of RIE and chemical mechanical polish (CMP)
- B. Davari
- C. Koburger
- et al.
- 1989
- IEDM 1989
Fully self-aligned epitaxial-base transistor
- R. Schulz
- M. Jost
- et al.
- 1989
- VLSI Technology 1989