65nm Cu integration and interconnect reliability in low stress K=2.75 SiCOH
- V. McGahay
- G. Bonilla
- et al.
- 2006
- IITC 2006
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9 results for J. Martin
PECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devices
- K. Ida
- S. Nguyen
- et al.
- 2005
- AMC 2005
Low-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodes
- T. Nogami
- S. Lane
- et al.
- 2005
- Optics East 2005
Lower-k SiCOH integration for 65 nm ground rules
- T. Nogami
- S. Lane
- et al.
- 2005
- VMIC 2005
Electrical and reliability evaluation of Cu/Low-k integration: Exploration of PVD barrier/seed and CVD SiC(N,H) cap depositions
- C.-C. Yang
- D. Edelstein
- et al.
- 2004
- ADMETA 2004
Reliability, yield, and performance of a 90 nm SOI/Cu/SiCOH technology
- D. Edelstein
- C.R. Davis
- et al.
- 2004
- IITC 2004
Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL
- D. Edelstein
- H.S. Rathore
- et al.
- 2004
- IRPS 2004
Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL
- D. Edelstein
- H.S. Rathore
- et al.
- 2004
- IRPS 2004
Line resistance and electromigration variations induced by hydrogen-based plasma modifications to the silicon carbonitride/copper interface
- E. Todd Ryan
- Jeremy Martin
- et al.
- 2007
- JES