32nm general purpose bulk CMOS technology for high performance applications at low voltage
- F. Arnaud
- J. Liu
- et al.
- 2008
- IEDM 2008
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3 results for C. Hobbs
A cost effective 32nm high-K/metal gate CMOS technology for low power applications with single-metal/gate-first process
- X. Chen
- S. Samavedam
- et al.
- 2008
- VLSI Technology 2008
Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates
- Tiezhong Ma
- Stephen A. Campbell
- et al.
- 2001
- IEEE Transactions on Electron Devices