High performance gate first HfSiON dielectric satisfying 45nm node requirements
- M.A. Quevedo-Lopez
- S. Krishnan
- et al.
- 2005
- IEDM 2005
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Mobility and charge trapping comparison for crystalline and amorphous HfON and HfSiON gate dielectrics
- P.D. Kirsch
- M.A. Quevedo-Lopez
- et al.
- 2006
- Applied Physics Letters