22 nm technology compatible fully functional 0.1 μm 2 6T-sram cellB. HaranA. Kumaret al.2008IEDM 2008
Characterization of iodoheptafluoropropane as a dielectric etchant. I. Process performance evaluationSimon KareckiRitwik Chatterjeeet al.2001Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures