A 500MHz random cycle 1.5ns-latency, SOI embedded DRAM macro featuring a 3T micro sense amplifier
- John Barth
- William Reohr
- et al.
- 2007
- ISSCC 2007
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3 results for Charles C. Tanner
A 0.127 μm2 high performance 65 nm SOI based embedded DRAM for on-processor applications
- G. Wang
- K. Cheng
- et al.
- 2006
- IEDM 2006
A 500 MHz Random Cycle, 1.5 ns Latency, SOI Embedded DRAM Macro Featuring a Three-Transistor Micro Sense Amplifier
- John Barth
- William R. Reohr
- et al.
- 2008
- IEEE Journal of Solid-State Circuits