Hole transport in strained and relaxed sige channel extremely thin SOI MOSFETs
- Ali Khakifirooz
- Kangguo Cheng
- et al.
- 2013
- IEEE Electron Device Letters
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45 results for Kangguo Cheng
Scalability of extremely thin SOI (ETSOI) MOSFETs to sub-20-nm gate length
- Ali Khakifirooz
- Kangguo Cheng
- et al.
- 2012
- IEEE Electron Device Letters
High-performance partially depleted SOI PFETs with in situ doped sige raised source/drain and implant-free extension
- Ali Khakifirooz
- Kangguo Cheng
- et al.
- 2011
- IEEE Electron Device Letters
Self-Allancd Gate Contact (SAGC) for CMOS technology scaling beyond 7nm
- Ruilong Xie
- Chanro Park
- et al.
- 2019
- VLSI Technology 2019
Failure isolation in ring oscillator circuit and defect detection in CMOS technology research
- Victor Chan
- M. Bergendahl
- et al.
- 2019
- ASMC 2019
Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id-Vd characteristics
- Miaomiao Wang
- Richard G. Southwick
- et al.
- 2018
- IRPS 2018
(Invited) FinFET technology
- Kangguo Cheng
- 2017
- ECS Meeting 2017
First demonstration of InGaAs/SiGe CMOS inverters and dense SRAM arrays on Si using selective epitaxy and standard FEOL processes
- Lukas Czornomaz
- V. Djara
- et al.
- 2016
- VLSI Technology 2016
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- Dechao Guo
- G. Karve
- et al.
- 2016
- VLSI Technology 2016
Impact of source/drain silicon cap on FDSOI SiGe pMOSFET performance
- E. Augendre
- S. Maitrejean
- et al.
- 2015
- S3S 2015