A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- Ruilong Xie
- Pietro Montanini
- et al.
- 2016
- IEDM 2016
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7 results for Andre Labonte
Self-Allancd Gate Contact (SAGC) for CMOS technology scaling beyond 7nm
- Ruilong Xie
- Chanro Park
- et al.
- 2019
- VLSI Technology 2019
Introduction of pre-etch deposition techniques in EUV patterning
- Xun Xiang
- Genevieve Beique
- et al.
- 2018
- SPIE Advanced Lithography 2018
Tungsten and cobalt metallization: A material study for MOL local interconnects
- Vimal Kamineni
- Mark Raymond
- et al.
- 2016
- IITC/AMC 2016
EUV patterning successes and frontiers
- Nelson Felix
- Daniel Corliss
- et al.
- 2016
- SPIE Advanced Lithography 2016
Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP)
- Yannick Feurprier
- Katie Lutker-Lee
- et al.
- 2015
- SPIE Advanced Lithography 2015
Plasma etch challenges with new EUV lithography material introduction for patterning for MOL and BEOL
- Changwoo Lee
- Bhaskar Nagabhirava
- et al.
- 2015
- SPIE Advanced Lithography 2015