Hf O2 high-k dielectrics grown on (100)Ge with ultrathin passivation layers: Structure and interfacial stability
- J.W. Seo
- Ch. Dieker
- et al.
- 2005
- Applied Physics Letters
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.