Analysis of failure mechanism on gate-silicided and gate-non-silicided, drain/source silicide-blocked ESD NMOSFETs in a 65nm bulk CMOS technology
- Junjun Li
- David Alvarez
- et al.
- 2006
- IPFA 2006
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PMOSFET-based ESD protection in 65nm bulk CMOS technology for improved external latchup robustness
- Junjun Li
- Robert Gauthier
- et al.
- 2005
- EOS/ESD 2005