Preparation of SrRuO3 films for advanced CMOS metal gates
- K. Fröhlich
- K. Hušeková
- et al.
- 2004
- Materials Science in Semiconductor Processing
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2 results for J.C. Hooker
Characterization of field-effect transistors with La 2Hf 2O 7 and HfO 2 gate dielectric layers deposited by molecular-beam epitaxy
- Z.M. Rittersma
- J.C. Hooker
- et al.
- 2006
- Journal of Applied Physics