PMOSFET-based ESD protection in 65nm bulk CMOS technology for improved external latchup robustness
- Junjun Li
- Robert Gauthier
- et al.
- 2005
- EOS/ESD 2005
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Electrostatic discharge induced oxide breakdown characterization in a 0.1 μm CMOS technology
- A. Salman
- R. Gauthier
- et al.
- 2002
- IRPS 2002