Spatial separation of vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperature
- I. Danilov
- H. Boudinov
- et al.
- 2005
- Journal of Applied Physics
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.