III-V heterostructure-on-insulator for strain studies in n-InGaAs channels
- P. Weigele
- Lukas Czornomaz
- et al.
- 2013
- ULIS 2013
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139 results for Daniele Caimi
Electro-optical active barium titanate thin films in silicon photonics devices
- Stefan Abel
- Thilo Stöferle
- et al.
- 2013
- IPRSN 2013
Controlling tetragonality and crystalline orientation in BaTiO3 nano-layers grown on Si
- Stefan Abel
- Marilyne Sousa
- et al.
- 2013
- Nanotechnology
A strong electro-optically active lead-free ferroelectric integrated on silicon
- Stefan Abel
- Thilo Stöferle
- et al.
- 2013
- Nature Communications
Heterointegration by molecular beam epitaxy: (In, Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars
- M. Richter
- Emanuele Uccelli
- et al.
- 2013
- Journal of Crystal Growth
An integration path for gate-first UTB III-V-on-insulator MOSFETs with silicon, using direct wafer bonding and donor wafer recycling
- Lukas Czornomaz
- N. Daix
- et al.
- 2012
- IEDM 2012
Gate-first implant-free InGaAs n-MOSFETs with sub-nm EOT and CMOS-compatible process suitable for VLSI
- Lukas Czornomaz
- Mario El Kazzi
- et al.
- 2012
- DRC 2012
CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs
- L. Czornomaz
- M. El Kazzi
- et al.
- 2012
- Solid-State Electronics
Electro-optical properties of barium titanate films epitaxially grown on silicon
- Stefan Abel
- Daniele Caimi
- et al.
- 2012
- SPIE OPTO 2012
Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In 0.53Ga 0.47As metal-oxide-semiconductor field-effect-transistors
- Mario El Kazzi
- Lukas Czornomaz
- et al.
- 2012
- Applied Physics Letters