SiGe HBT technology with f max/f T = 350/300 GHz and gate delay below 3.3 ps
- M. Khater
- J.-S. Rieh
- et al.
- 2004
- IEDM 2004
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4 results for David I. Sanderson
Low phase noise 5 GHz VCOs in 0.13 μm SOI and bulk CMOS
- David I. Sanderson
- Jonghae Kim
- et al.
- 2006
- ICSICT 2006
Enabling RFCMOS solutions for emerging advanced applications
- John J. Pekarik
- Douglas D. Coolbaugh
- et al.
- 2005
- GAAS 2005
SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHz
- J.-S. Rieh
- D.R. Greenberg
- et al.
- 2004
- RFIC 2004