Publications

2 results for Hidemi Ishiuchi

SODEL FET: Novel channel and source/drain profile engineering schemes by selective Si epitaxial growth technology
- - Satoshi Inaba
  - Kiyotaka Miyano
  - et al.
- 2004
- IEEE Transactions on Electron Devices
A 0.6 µm² 256Mb Trench DRAM Cell with Self-Aligned Buried Strap (BEST)
- - L.A. Nesbit
  - J. Alsmeier
  - et al.
- 1993
- IEDM 1993