High mobility p-channel germanium MOSFETS with a thin Ge oxynitride gate dielectric
- Huiling Shang
- Harald Okorn-Schmidt
- et al.
- 2002
- IEDM 2002
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10 results for H. Okorn-Schmidt
80 nm poly-silicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications
- D.A. Buchanan
- E. Gusev
- et al.
- 2000
- IEDM 2000
A selective etching process for chemically inert high-k metal oxides
- Katherine L. Saenger
- Harald F. Okorn-Schmidt
- et al.
- 2002
- MRS Proceedings 2002
Ultrathin high-K metal oxides on silicon: Processing, characterization and integration issues
- E. Gusev
- E. Cartier
- et al.
- 2001
- Microelectronic Engineering
Characterization of DI water/O3 oxidation of Si (100) and Si (111) surfaces by OCP measurements
- H. Okorn-Schmidt
- C. D'Emic
- et al.
- 2000
- Diffusion and Defect Data Pt.B: Solid State Phenomena
High temperature stability of Al2O3 dielectrics on Si: Interfacial metal diffusion and mobility degradation
- S. Guha
- E. Gusev
- et al.
- 2002
- Applied Physics Letters
Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films
- A.C. Callegari
- E. Cartier
- et al.
- 2001
- Journal of Applied Physics
Enhancement of Semiconductor Wafer Cleaning by Chelating Agent Addition
- Glenn W. Gale
- David L. Rath
- et al.
- 2001
- JES
Ultrathin high-K gate stacks for advanced CMOS devices
- E. Gusev
- D.A. Buchanan
- et al.
- 2001
- Technical Digest - International Electron Devices Meeting
Characterization of silicon surface preparation processes for advanced gate dielectrics
- H. Okorn-Schmidt
- 1999
- IBM J. Res. Dev