p-Type SiGe transistors with low gate leakage using SiN gate dielectric
- W. Lu
- X.W. Wang
- et al.
- 1999
- IEEE Electron Device Letters
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9 results for Ilesanmi Adesida
A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET
- M. Arafa
- K. Ismail
- et al.
- 1996
- IEEE Electron Device Letters
DC and RF performance of 0.25 μm p-type SiGe MODFET
- M. Arafa
- P. Fay
- et al.
- 1996
- IEEE Electron Device Letters
High speed p-type SiGe modulation-doped field-effect transistors
- M. Arafa
- P. Fay
- et al.
- 1996
- IEEE Electron Device Letters
Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths
- Wu Lu
- Steven J. Koester
- et al.
- 2000
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
High performance 0.1 μm gate-length p-type SiGe MODFET's and MOS-MODFET's
- Wu Lu
- Almaz Kuliev
- et al.
- 2000
- IEEE Transactions on Electron Devices
Design, fabrication, and performance of high-speed monolithically integrated InAlAs/InGaAs/InP MSM/HEMT photoreceivers
- Patrick Fay
- Mohamed Arafa
- et al.
- 1997
- Journal of Lightwave Technology
Submicrometer p-Type SiGe modulation-doped field-effect transistors for high speed applications
- I. Adesida
- M. Arafa
- et al.
- 1997
- Microelectronic Engineering
High-transconductance p-type SiGe modulation-doped field-effect transistor
- M. Arafa
- P. Fay
- et al.
- 1995
- Electronics Letters