New single source precursor approach to gallium and aluminum nitride
- D. Neumayer
- C.J. Carmalt
- et al.
- 1995
- MRS Fall Meeting 1995
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9 results for John G. Ekerdt
New Single-Source Precursor Approach to Gallium Nitride
- Deborah A. Neumayer
- Alan H. Cowley
- et al.
- 1995
- JACS
Atomic layer deposition of epitaxial ferroelectric barium titanate on Si(001) for electronic and photonic applications
- Edward L. Lin
- Agham B. Posadas
- et al.
- 2019
- Journal of Applied Physics
Quasi-two-dimensional electron gas at the interface of γ-Al2O3/SrTiO3 heterostructures grown by atomic layer deposition
- Thong Q. Ngo
- Nicholas J. Goble
- et al.
- 2015
- Journal of Applied Physics
Quasi-two-dimensional electron gas at the epitaxial alumina/SrTiO3 interface: Control of oxygen vacancies
- Kristy J. Kormondy
- Agham B. Posadas
- et al.
- 2015
- Journal of Applied Physics
Incorporation of la in epitaxial SrTiO3 thin films grown by atomic layer deposition on SrTiO3-buffered Si (001) substrates
- Martin D. McDaniel
- Agham Posadas
- et al.
- 2014
- Journal of Applied Physics
Epitaxial c -axis oriented BaTiO3 thin films on SrTiO 3-buffered Si(001) by atomic layer deposition
- Thong Q. Ngo
- Agham B. Posadas
- et al.
- 2014
- Applied Physics Letters
Epitaxial growth of LaAlO3 on SrTiO3-buffered Si (001) substrates by atomic layer deposition
- Thong Q. Ngo
- Agham Posadas
- et al.
- 2013
- Journal of Crystal Growth
Growth of group III nitrides. A review of precursors and techniques
- Deborah A. Neumayer
- John G. Ekerdt
- 1996
- Chemistry of Materials