The combined effects of deuterium anneals and deuterated barrier-nitride processing on hot-electron degradation in MOSFET's
- Thomas G. Ference
- Jay S. Burnham
- et al.
- 1999
- IEEE Transactions on Electron Devices
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.