Perspectives into CVD-cobalt liner induced increase in resistivity of Cu interconnect
- Wei Lin
- Xunyuan Zhang
- et al.
- 2013
- ADMETA 2013
Publications
Date
Featured collections
Popular topics
55 results for Takeshi Nogami
Electrical properties and reliability of ALD TaN barrier for sub-90nmPitch Cu interconnects
- Tibor Bolom
- J. Lee
- et al.
- 2013
- ADMETA 2013
Electromigration comparison of selective CVD cobalt capping with PVD Ta(N) and CVD cobalt liners on 22nm-groundrule dual-damascene Cu interconnects
- A. Simon
- Tibor Bolom
- et al.
- 2013
- IRPS 2013
Mechanism of co liner as enhancement layer for Cu interconnect gap-fill
- M. He
- X. Zhang
- et al.
- 2013
- JES
CVD and ALD Co(W) films using amidinato precursors as a single-layered barrier/liner for next-generation Cu-interconnects
- Hideharu Shimizu
- Yudai Suzuki
- et al.
- 2013
- ECS J. Solid State Sci. Technol.
Electrodeposited Cu film morphology on thin PVD Cu seed layers
- James J. Kelly
- X. Lin
- et al.
- 2013
- ECS Transactions
Electromigration extendibility of Cu(Mn) alloy-seed interconnects, and understanding the fundamentals
- Takeshi Nogami
- C. Penny
- et al.
- 2012
- IEDM 2012
Electrolyte additive chemistry and feature size-dependent impurity incorporation for Cu interconnects
- James J. Kelly
- Takeshi Nogami
- et al.
- 2011
- ECS Meeting 2011
Electromigration in Cu(Al) and Cu(Mn) damascene lines
- C.-K. Hu
- J. Ohm
- et al.
- 2012
- Journal of Applied Physics
Competitive and cost effective copper/low-k interconnect (BEOL) for 28 nm CMOS technologies
- R. Augur
- C. Child
- et al.
- 2012
- Microelectronic Engineering