Positive bilayer resists for 248- and 193-nm lithography
- Ratnam Sooriyakumaran
- Gregory M. Wallraff
- et al.
- 1998
- Microlithography 1998
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Etch selectivity of 4SiMA: Hydroxystyrene based copolymers. silicon chemistry for bilayer resist systems
- G.M. Wallraff
- Carl E. Larson
- et al.
- 1998
- J. Photopolym. Sci. Tech.