Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N2 overpressure
- A. Pelzmann
- S. Strite
- et al.
- 1997
- MRS Internet Journal of Nitride Semiconductor Research
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.