Impact of Floating Body Effect, Back-Gate Traps, and Trap-Assisted Tunneling on Scaled In0.53Ga0.47As Ultrathin-Body MOSFETs and Mitigation Measures
- Saurabh Sant
- Paulina Aguirre
- et al.
- 2018
- IEEE T-ED
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15 results for Herwig Hahn
Highly selective dry etching of GaP in the presence of AlxGa1-xP with a SiCl4/SF6 plasma
- Simon Hönl
- Herwig Hahn
- et al.
- 2018
- Journal of Physics D: Applied Physics
Demonstration of 3-D SRAM Cell by 3-D Monolithic Integration of InGaAs n-FinFETs on FDSOI CMOS with Interlayer Contacts
- Veeresh Deshpande
- Herwig Hahn
- et al.
- 2017
- IEEE T-ED
Low-resistive, CMOS-compatible ohmic contact schemes to moderately doped n-InP
- Herwig Hahn
- Marilyne Sousa
- et al.
- 2017
- Journal of Physics D: Applied Physics
The III-nitride double heterostructure revisited: Benefits for threshold voltage engineering of mis devices
- Herwig Hahn
- Carsten Funck
- et al.
- 2016
- IEEE T-ED