Interface states induced by the presence of trapped holes near the silicon-silicon-dioxide interface
- D.J. DiMaria
- D.A. Buchanan
- et al.
- 1995
- Journal of Applied Physics
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3 results for R.E. Stahlbush
Anomalous positive charge formation by atomic hydrogen exposure
- R.E. Stahlbush
- E. Cartier
- et al.
- 1995
- Microelectronic Engineering
Interface Defect Formation in MOSFETs by Atomic Hydrogen Exposure
- R.E. Stahlbush
- E. Cartier
- 1994
- IEEE TNS