Rapid thermal annealing induced order-disorder transition in Ga 0.52In0.48P/(Al0.35Ga0.65) 0.5In0.5P heterostructuresY. HämischR. Steffenet al.1993Applied Physics Letters
Implantation induced order-disorder transition in ga0.52lno.48p/(alo.35gao.65)o.5lno.5p heterostructuresYork HämischRobert Steffenet al.1993Japanese Journal of Applied Physics