A Highly Reliable Low Temperature Al-Cu Line/Via Metallization for Sub-Half Micrometer CMOS
- R.V. Joshi
- H. Dalai
- et al.
- 1995
- IEEE Electron Device Letters
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210 results for Rajiv V. Joshi
Formation of Al-Cu via/interconnect by low-pressure collimated sputtering
- R.V. Joshi
- H.M. Dalal
- et al.
- 1995
- Applied Physics Letters
A DUAL DAMASCENE HARD METAL CAPPED CU AND AL-ALLOY FOR INTERCONNECT WIRING OF ULSI CIRCUITS
- H. Dalai
- R.V. Joshi
- et al.
- 1993
- IEDM 1993
A New Damascene Structure for Submicrometer Interconnect Wiring
- Rajiv V. Joshi
- 1993
- IEEE Electron Device Letters
Non-self-limiting nature of silicon reduction of WF6 in cold wall systems
- R.V. Joshi
- V. Prasad
- et al.
- 1992
- Journal of Applied Physics
Collimated sputtering of TiN/Ti liners into sub-half-micrometer high aspect ratio contacts/lines
- R.V. Joshi
- S.B. Brodsky
- 1992
- Applied Physics Letters
Diffusion of dopants in tungsten disilicide: effects of diffusion paths
- O. Thomas
- G. Scilla
- et al.
- 1991
- Applied Surface Science
A novel application of polyimide-W-AI/CU for VLSI interconnect
- R.V. Joshi
- L. Hsu
- et al.
- 1991
- VMIC 1991
A 2-ns Cycle, 3.8-ns Access 512-kb CMOS ECL SRAM with a Fully Pipelined Architecture
- Terry I. Chappell
- Barbara A. Chappell
- et al.
- 1991
- IEEE Journal of Solid-State Circuits
Surface reactions in the chemical vapor deposition of tungsten using WF6 and SiH4 on Al, PtSi, and TiN
- Ming L. Yu
- Kie Y. Ahn
- et al.
- 1990
- Journal of Applied Physics