Surface reactions in the chemical vapor deposition of tungsten using WF6 and SiH4 on Al, PtSi, and TiN
- Ming L. Yu
- Kie Y. Ahn
- et al.
- 1990
- Journal of Applied Physics
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199 results for Rajiv V. Joshi
Mechanisms controlling temperature dependent mechanical and electrical behavior of SiH4 reduced chemically vapor deposited W
- R.V. Joshi
- V. Prasad
- et al.
- 1990
- Journal of Applied Physics
Surface chemistry of the WF6-based chemical vapor deposition of tungsten
- M.L. Yu
- K.Y. Ahn
- et al.
- 1990
- IBM J. Res. Dev
Novel self-aligned W/TiN/TiSi2 contact structure for very shallow junctions and interconnections
- R.V. Joshi
- D. Moy
- et al.
- 1989
- Applied Physics Letters
Comparison of the diffusion barrier properties of tungsten films prepared by hydrogen and silicon reduction of tungsten hexafluoride
- O. Thomas
- A. Charai
- et al.
- 1989
- Thin Solid Films
Ion-implantation-induced fluorine agglomeration in tungsten disilicide prepared by low-pressure chemical vapour deposition
- C.Sture Petersson
- Harry J. Whitlow
- et al.
- 1989
- Nuclear Inst. and Methods in Physics Research, B
Effect of excess silicon on behavior of LPCVD WSix films on silicon
- R.V. Joshi
- Young H. Kim
- et al.
- 1988
- Thin Solid Films
Properties of selective low pressure chemically vapor deposited tungsten films produced by hydrogen reduction in a cold wall system
- R.V. Joshi
- D.A. Smith
- et al.
- 1988
- Thin Solid Films
Stacking faults in WSi2: Resistivity effects
- F.M. d'Heurle
- F.K. LeGoues
- et al.
- 1986
- Applied Physics Letters