35 GHz/35 psec ECL pnp technology
- J. Warnock
- P.F. Lu
- et al.
- 1990
- IEDM 1990
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236 results for Keith A. Jenkins
Sub-30ps ECL circuits using high-fT Si and SiGe epitaxial base SEEW transistors
- J.N. Burghartz
- J.H. Comfort
- et al.
- 1990
- IEDM 1990
Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology
- J.H. Comfort
- G.L. Patton
- et al.
- 1990
- IEDM 1990
Frequency Response of Advanced Silicon Bipolar Transistors at Low Temperature
- Keith A. Jenkins
- 1990
- IEEE T-ED
50-GHz Self-Aligned Silicon Bipolar Transistors with Ion-Implanted Base Profiles
- James Warnock
- John D. Cressler
- et al.
- 1990
- IEEE Electron Device Letters
Low temperature 12 ns DRAM
- W.H. Henkels
- N.C.-C. Lu
- et al.
- 1989
- VLSI-TSA 1989
Low temperature SER and noise in a high speed DRAM
- W.H. Henkels
- N.C.-C. Lu
- et al.
- 1989
- Workshop on Low Temperature Semiconductor Electronics 1989
Low-temperature operation of silicon bipolar ECL circuits
- J.D. Cressler
- D.D. Tang
- et al.
- 1989
- ISSCC 1989
A 27 GHz 20 ps PNP technology
- J. Warnock
- P.F. Lu
- et al.
- 1989
- IEDM 1989
Submicron high performance bipolar technology
- T.C. Chen
- J.D. Cressler
- et al.
- 1989
- VLSI Technology 1989